BDX37

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX37 DESCRIPTION ・With TO-126 package ・High current (Max: 5A) APPLICATIONS ・High current switching in power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb≤75℃ Open emitter Open base Open collector CONDITIONS VALUE 120 75 5 5 10 2 15 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 5 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE CC fT PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector capacitance Transition frequency CONDITIONS IC=5A; IB=0.5A IC=7A; IB=0.7A IC=5A; IB=0.5A IC=7A; IB=0.7A VCB=100V; IE=0 Tj=100℃ VEB=5V; IC=0 IC=0.5A ; VCE=10V IE=0;VCB=10V ;f=1MHz IC=0.5A; VCE=5V ;f=100MHz 45 40 100 MIN TYP. BDX37 MAX 0.9 1.2 1.7 2.0 0.1 10 0.1 450 UNIT V V V V μA μA pF MHz Switching times ICon=1A;IBon=-IBoff=0.1A ton Turn-on time ICon=2A;IBon=-IBoff=0.2A ICon=5A;IBon=-IBoff=0.5A ICon=1A;IBon=-IBoff=0.1A toff turn-off time ICon=2A;IBon=-IBoff=0.2A ICon=5A;IBon=-IBoff=0.5A 180 600 450 350 60 100 80 300 800 700 500 ns ns 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX37 Fig.2 Outline dimensions 3