BDX53

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON ・Complement to type BDX54/A/B/C APPLICATIONS ・Power linear and switching applications ・Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX53/A/B/C Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BDX53 BDX53A VCBO Collector-base voltage BDX53B BDX53C BDX53 BDX53A VCEO Collector-emitter voltage BDX53B BDX53C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 100 5 8 12 0.2 60 150 -65~150 V A A A W ℃ ℃ Open emitter 80 100 45 60 V CONDITIONS VALUE 45 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDX53 BDX53A IC=0.1A, IB=0 BDX53B BDX53C VCEsat VBE sat Collector-emitter saturation voltage Base-emitter saturation voltage BDX53 BDX53A ICBO Collector cut-off current BDX53B BDX53C BDX53 BDX53A ICEO Collector cut-off current BDX53B BDX53C IEBO hFE VF-1 VF-2 Emitter cut-off current DC current gain Forward diode voltage Forward diode voltage VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IF=3A IF=8A 750 VCB=80V, IE=0 VCB=100V, IE=0 VCE=22V, IB=0 VCE=30V, IB=0 IC=3A ,IB=12mA IC=3A ,IB=12mA VCB=45V, IE=0 VCB=60V, IE=0 80 100 CONDITIONS MIN 45 60 BDX53/A/B/C TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 2.0 2.5 V V 0.2 mA 0.5 mA 2.0 mA 1.8 2.5 2.5 V V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX53/A/B/C Fig.2 Outline dimensions 3