BDX53F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX53F DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain: hFE= 500(Min)@ IC= 2A ·Complement to Type BDX54F APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 160 5 8 12 0.2 60 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.08 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDX53F TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 B 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 10mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 10mA B 2.5 V VECF C-E Diode Forward Voltage IF= 2A 2.5 V ICEO Collector Cutoff Current VCE= 80V; IB= 0 B 0.5 mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 2A ; VCE= 5V 500 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 150 isc Website：www.iscsemi.cn 2