BDX54C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON ・Complement to type BDX53/A/B/C APPLICATIONS ・Power linear and switching applications ・Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX54/A/B/C Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BDX54 BDX54A VCBO Collector-base voltage BDX54B BDX54C BDX54 BDX54A VCEO Collector-emitter voltage BDX54B BDX54C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -100 -5 -8 -12 -0.2 60 150 -65~150 V A A A W ℃ ℃ Open emitter -80 -100 -45 -60 V CONDITIONS VALUE -45 -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDX54 BDX54A IC=-0.1A, IB=0 BDX54B BDX54C VCEsat VBE sat Collector-emitter saturation voltage Base-emitter saturation voltage BDX54 BDX54A ICBO Collector cut-off current BDX54B BDX54C BDX54 BDX54A ICEO Collector cut-off current BDX54B BDX54C IEBO hFE VF-1 VF-2 Emitter cut-off current DC current gain Forward diode voltage Forward diode voltage VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IF=-3A IF=-8A 750 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-22V, IB=0 VCE=-30V, IB=0 IC=-3A ,IB=-12mA IC=-3A ,IB=-12mA VCB=-45V, IE=0 VCB=-60V, IE=0 -80 -100 CONDITIONS MIN -45 -60 BDX54/A/B/C TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -2.0 -2.5 V V -0.2 mA -0.5 mA -2 mA -1.8 -2.5 -2.5 V V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX54/A/B/C Fig.2 Outline dimensions 3