BDX63C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX63 Collector-Base Voltage BDX63A BDX63B BDX63C BDX63 Collector-Emitter Voltage BDX63A BDX63B BDX63C VEBO IC ICM IB B BDX63/A/B/C VALUE 80 100 UNIT VCBO V 120 140 60 80 V 100 120 5 8 12 0.15 90 200 -65~200 V A A A W ℃ ℃ VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX63 BDX63A IC= 100mA ;IB=0 BDX63B BDX63C VCE(sat) VBE(on) VECF ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance IC= 3A; IB= 12mA B BDX63/A/B/C CONDITIONS MIN 60 80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 100 120 2 2.5 1.2 0.2 0.2 2 5 2500 1000 2600 100 pF V V V mA mA mA IC= 3A ; VCE= 3V IF= 3A VCE= 1/2VCEOmax; IB= 0 VCB= VCEOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TJ= 200℃ VEB= 5V; IC=0 IC= 0.5A ; VCE= 3V IC= 3A ; VCE= 3V IC= 8A ; VCE= 3V IE= 0 ; VCB= 10V; ftest= 1MHz Switching times ton toff Turn-on Time IC= 3A; IB1= -IB2= 12mA Turn-off Time 5 μs 0.5 μs isc Website：www.iscsemi.cn 2