INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER BDX64 Collector-Base Voltage BDX64A BDX64B BDX64C BDX64 Collector-Emitter Voltage BDX64A BDX64B BDX64C VEBO IC ICM IB
B
BDX64/A/B/C
VALUE -80 -100
UNIT
VCBO
V -120 -140 -60 -80 V -100 -120 -5 -12 -16 -0.2 117 200 -65~200 V A A A W ℃ ℃
VCEO
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX64 BDX64A IC= -100mA ;IB=0 BDX64B BDX64C VCE(sat) VBE(on) VECF ICEO ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current BDX64 BDX64A ICBO Collector Cutoff Current BDX64B BDX64C IEBO hFE-1 hFE-2 hFE-3 COB Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance VCB= -60V;IE= 0;TJ= 200℃ VCB= -70V;IE= 0;TJ= 200℃ VEB= -5V; IC=0 IC= -1A ; VCE= -3V IC= -5A ; VCE= -3V IC= -12A ; VCE= -3V IE= 0 ; VCB= -10V; ftest= 1MHz IC= -5A; IB= -20mA
B
BDX64/A/B/C
CONDITIONS
MIN -60 -80
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
V -100 -120 -2 -2.5 -1.8 -0.2 -0.4 V V V mA mA
IC= -5A ; VCE= -3V IF= -5A VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= -40V;IE= 0;TJ= 200℃ VCB= -50V;IE= 0;TJ= 200℃
-3
mA
-5 1500 1000 750 200
mA
pF
Switching times ton toff Turn-on Time IC= -5A; IB1= -IB2= -20mA Turn-off Time 2.5 μs 1 μs
isc Website:www.iscsemi.cn
2
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