BDX64C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX64C DESCRIPTION ・With TO-3 package ・DARLINGTON ・Complement to type BDX65C APPLICATIONS ・Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -12 -16 -0.2 117 -55~200 -55~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO VF hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current Diode forward voltage DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ; IB=0;L=25mH IC=-5A ;IB=-20mA IC=-5A;VCE=-3V VCB=-120V; IE=0 TC=150℃ VCE=-60V; IB=0 VEB=-5V; IC=0 IF=-5A IC=-1A ; VCE=-3V IC=-5A ; VCE=-3V IC=-12A ; VCE=-3V IC=-5A ; VCE=-3V;f=1MHz 1000 750 7 MIN -120 BDX64C TYP. MAX UNIT V -2 -2.5 -0.2 -2 -1 -5 -1.8 1500 V V mA mA mA V MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX64C Fig.2 Outline dimensions 3