BDX66C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66C DESCRIPTION ・With TO-3 package ・DARLINGTON ・High current APPLICATIONS ・Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -16 -20 -0.25 150 -55~200 -55~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat ICBO ICEO IEBO PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current CONDITIONS IC=-0.1A ; IB=0;L=25mH IC=-10A ;IB=-40mA VCB=-70V; IE=0 TC=150℃ VCE=-60V; IB=0 VEB=-5V; IC=0 MIN -120 -2 -1 -5 -3 -5 TYP. MAX UNIT V V mA mA mA Switching times ton toff Turn-on time Turn-off time 1.0 3.5 μs μs IC=-10A ; IB1=-IB2=0.04A VCC=12V ; 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX66C Fig.2 Outline dimensions 3