BDX69B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX69 BDX69A VCBO Collector-Base Voltage BDX69B BDX69C BDX69 BDX69A VCEO Collector-Emitter Voltage BDX69B BDX69C VEBO IC ICM IB B BDX69/A/B/C VALUE 80 100 UNIT V 120 140 60 80 V 100 120 5 25 40 500 150 200 -65~200 V A A mA W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX69 BDX69A IC= 100mA ; L= 25mH BDX69B BDX69C VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage BDX69 BDX69A BDX69B BDX69C BDX69 BDX69A BDX69B BDX69C IEBO hFE-1 hFE-2 hFE-3 COB Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance IC= 20A; IB= 80mA IC= 20A; VCE= 3V VCB= 80V; IE= 0 VCB= 40V; IE= 0; TC=200℃ VCB= 100V; IE= 0 VCB= 50V; IE= 0; TC=200℃ VCB= 120V; IE= 0 VCB= 60V; IE= 0; TC=200℃ VCB= 140V; IE= 0 VCB= 70V; IE= 0; TC=200℃ VCE= 30V; IB=0 B BDX69/A/B/C CONDITIONS MIN 60 80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 100 120 2.0 2.5 2.0 10 2.0 10 2.0 10 2.0 10 V V ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 40V; IB=0 B 6.0 VCE= 50V; IB=0 B mA VCE= 60V; IB=0 B VEB= 5V; IC=0 IC= 5A; VCE= 3V IC= 20A; VCE= 3V IC= 30A; VCE= 3V IE= 0 ; VCB= 10V, ftest= 1.0MHz 1000 4000 600 3000 10 mA pF isc Website：www.iscsemi.cn 2