BDX78

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX78 DESCRIPTION ・With TO-220C package ・Complement to type BDX77 APPLICATIONS ・Medium power switching ・Amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak tp=10ms Base current Total power dissipation Junction temperature Storage temperature Tmb=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -8 -12 -3 60 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE 70 UNIT K/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEO IEBO fT hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current Transition frequency DC current gain CONDITIONS IC=-0.2A; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-3A; IB=-0.3A IC=-6A; IB=-0.6A IC=-6A; IB=-0.6A IC=-3A ; VCE=-2V VCB=-40V; IE=0 VCE=-30V; IB=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-3V IC=-1A ; VCE=-2V 7 30 MIN -80 -100 -5 TYP. BDX78 MAX UNIT V V V -1.0 -1.5 -2.0 -1.5 -0.1 -0.2 -0.5 V V V V mA mA mA MHz Switching times ton toff Turn-on time IC=2A IB1=-IB2=0.2A Turn-off time 2.0 μs 1.0 μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX78 Fig.2 Outline dimensions 3