BDX78F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX78F DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -80V(Min) ·Complement to Type BDX77F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak s Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -100 -80 -5 -8 -12 -3 32 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 6.3 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICEO ICBO IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -0.2A ;IB= 0 B BDX78F MIN -80 -100 -5 MAX UNIT V V V IC= -1mA ;IE= 0 IE= -1mA ;IC= 0 IC= -3A; IB= -0.3A B -1.0 -1.5 -2.0 -1.5 -0.2 -0.1 -1.0 -0.5 30 7.0 V V V V mA mA mA IC= -6A; IB= -0.6A B IC= -6A; IB= -0.6A B IC= -3A ; VCE= -2V VCE= 40V; IB= 0 B VCB= VCBO;IE= 0 1 VCB= /2VCBO;IE= 0; TJ= 150℃ VEB= -5V; IC=0 IC= -2A ; VCE= -2V IC= -0.3A ; VCE= -3V, ftest= 1.0MHz MHz Switching Times ton toff Turn-On Time IC= -2A; IB1= -IB2= -0.2A Turn-Off Time 2 μs 1 μs isc Website：www.iscsemi.cn 2