INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain: hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER BDX83 BDX83A VCBO Collector-Base Voltage BDX83B BDX83C BDX83 BDX83A VCEO Collector-Emitter Voltage BDX83B BDX83C VEBO IC ICM IB
B
BDX83/A/B/C
VALUE 45 60
UNIT
V 80 100 45 60 V 80 100 5 10 15 250 125 200 -65~200 V A A mA W ℃ ℃
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX83 BDX83A IC= 100mA; IB= 0 BDX83B BDX83C VCE(sat) VBE(on)-1 VBE(on)-2 Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage BDX83 BDX83A BDX83B BDX83C BDX83 BDX83A BDX83B BDX83C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= 5A; IB= 10mA
B
BDX83/A/B/C
CONDITIONS
MIN 45 60
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
V 80 100 2.0 2.8 4.5 0.5 3.0 0.5 3.0 0.5 3.0 0.5 3.0 V V V
IC= 5A; VCE= 3V IC= 10A; VCE= 3V VCE= 45V; VBE= -1.5V VCE= 45V; VBE= -1.5V; TC= 150℃ VCE= 60V; VBE= -1.5V VCE= 60V; VBE= -1.5V; TC= 150℃ VCE= 80V; VBE= -1.5V VCE= 80V; VBE= -1.5V; TC= 150℃ VCE= 100V; VBE= -1.5V VCE= 100V; VBE= -1.5V; TC= 150℃ VCE= 20V; IB=0
B
ICEV
Collector Cutoff Current
mA
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
B
1.0 VCE= 40V; IB=0
B
mA
VCE= 50V; IB=0
B
VEB= 5V; IC=0 IC= 1A; VCE= 3V IC= 5A; VCE= 3V IC= 10A; VCE= 3V 750 1000 250
5.0
mA
isc Website:www.iscsemi.cn
2
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