BDX84A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX84 BDX84A VCBO Collector-Base Voltage BDX84B BDX84C BDX84 BDX84A VCEO Collector-Emitter Voltage BDX84B BDX84C VEBO IC ICM IB B BDX84/A/B/C VALUE -45 -60 UNIT V -80 -100 -45 -60 V -80 -100 -5 -10 -15 -250 125 200 -65~200 V A A mA W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX84 BDX84A IC= -100mA; IB= 0 BDX84B BDX84C VCE(sat) VBE(on)-1 VBE(on)-2 Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage BDX84 BDX84A BDX84B BDX84C BDX84 BDX84A BDX84B BDX84C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= -5A; IB= -10mA B BDX84/A/B/C CONDITIONS MIN -45 -60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -80 -100 -2.0 -2.8 -4.5 -0.5 -3.0 -0.5 -3.0 -0.5 -3.0 -0.5 -3.0 V V V IC= -5A; VCE= -3V IC= -10A; VCE= -3V VCE= -45V; VBE= 1.5V VCE= -45V; VBE= 1.5V; TC= 150℃ VCE= -60V; VBE= 1.5V VCE= -60V; VBE= 1.5V; TC= 150℃ VCE= -80V; VBE= 1.5V VCE= -80V; VBE= 1.5V; TC= 150℃ VCE= -100V; VBE= 1.5V VCE= -100V; VBE= 1.5V; TC= 150℃ VCE= -20V; IB= 0 B ICEV Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -1.0 VCE= -40V; IB= 0 B mA VCE= -50V; IB= 0 B VEB= -5V; IC= 0 IC= -1A; VCE= -3V IC= -5A; VCE= -3V IC= -10A; VCE= -3V 750 1000 250 -5.0 mA isc Website：www.iscsemi.cn 2