BDX85

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX85/A/B/C DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C ·Complement to Type BDX86/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX85 BDX85A VCBO Collector-Base Voltage BDX85B BDX85C BDX85 BDX85A VCEO Collector-Emitter Voltage BDX85B BDX85C VEBO IC ICM IB B VALUE 45 60 UNIT V 80 100 45 60 V 80 100 5 10 15 100 100 200 -65~200 V A A mA W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.75 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX85 BDX85A IC= 100mA; IB= 0 BDX85B BDX85C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDX85 BDX85A BDX85B BDX85C BDX85 BDX85A BDX85B BDX85C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= 4A; IB= 16mA B BDX85/A/B/C CONDITIONS MIN 45 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 2.0 4.0 4.0 2.8 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 V V V V IC= 8A; IB= 40mA B IC= 8A; IB= 80mA B IC= 4A; VCE= 3V VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ VCB= 60V; IE= 0 VCB= 60V; IE= 0; TC= 150℃ VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 150℃ VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 150℃ VCE= 22V; IB= 0 B ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 1.0 VCE= 40V; IB= 0 B mA VCE= 50V; IB= 0 B VEB= 5V; IC= 0 IC= 3A; VCE= 3V IC= 4A; VCE= 3V IC= 8A; VCE= 4V 1000 750 200 2.0 mA 18000 isc Website：www.iscsemi.cn 2