BDX86B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX86/A/B/C DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C ·Complement to Type BDX85/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX86 BDX86A VCBO Collector-Base Voltage BDX86B BDX86C BDX86 BDX86A VCEO Collector-Emitter Voltage BDX86B BDX86C VEBO IC ICM IB B VALUE -45 -60 UNIT V -80 -100 -45 -60 V -80 -100 -5 -10 -15 -100 100 200 -65~200 V A A mA W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.75 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX86 BDX86A IC= -100mA; IB= 0 BDX86B BDX86C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDX86 BDX86A BDX86B BDX86C BDX86 BDX86A BDX86B BDX86C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= -4A; IB= -16mA B BDX86/A/B/C CONDITIONS MIN -45 -60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -80 -100 -2.0 -4.0 -4.0 -2.8 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 V V V V IC= -8A; IB= -40mA B IC= -8A; IB= -80mA B IC= -4A; VCE= -3V VCB= -45V; IE= 0 VCB= -45V; IE= 0; TC= 150℃ VCB= -60V; IE= 0 VCB= -60V; IE= 0; TC= 150℃ VCB= -80V; IE= 0 VCB= -80V; IE= 0; TC= 150℃ VCB= -100V; IE= 0 VCB= -100V; IE= 0; TC= 150℃ VCE= -22V; IB= 0 B ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -1.0 VCE= -40V; IB= 0 B mA VCE= -50V; IB= 0 B VEB= -5V; IC= 0 IC= -3A; VCE= -3V IC= -4A; VCE= -3V IC= -8A; VCE= -4V 1000 750 200 -2.0 mA 18000 isc Website：www.iscsemi.cn 2