BDX87A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C ·Complement to Type BDX88/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX87 BDX87A VCBO Collector-Base Voltage BDX87B BDX87C BDX87 BDX87A VCEO Collector-Emitter Voltage BDX87B BDX87C VEBO IC ICM IB B VALUE 45 60 UNIT V 80 100 45 60 V 80 100 5 12 18 200 120 200 -65~200 V A A mA W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.45 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX87 BDX87A IC= 100mA; IB= 0 BDX87B BDX87C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDX87 BDX87A BDX87B BDX87C BDX87 BDX87A BDX87B BDX87C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= 6A; IB= 24mA B BDX87/A/B/C CONDITIONS MIN 45 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 2.0 3.0 4.0 2.8 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 V V V V IC= 12A; IB= 120mA IC= 12A; IB= 120mA IC= 6A; VCE= 3V VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ VCB= 60V; IE= 0 VCB= 60V; IE= 0; TC= 150℃ VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 150℃ VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 150℃ VCE= 22V; IB= 0 B ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 1.0 VCE= 40V; IB= 0 B mA VCE= 50V; IB= 0 B VEB= 5V; IC= 0 IC= 5A; VCE= 3V IC= 6A; VCE= 3V IC= 12A; VCE= 3V 1000 750 100 2.0 mA 18000 isc Website：www.iscsemi.cn 2