BDX88C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX88C DESCRIPTION ・With TO-3 package ・Complement to type BDX87C ・DARLINGTON APPLICATIONS ・Designed for use in power linear and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Max. operating Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -12 -18 -0.2 120 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.45 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE hFE-1 hFE-2 hFE-3 ICBO ICEO IEBO VF-1 VF-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain DC current gain Collector cut-off current Collector cut-off current Emitter cut-off current Diode forward voltage Diode forward voltage CONDITIONS IC=-0.1A ; IB=0 IC=-6A ;IB=-24mA IC=-12A ;IB=-120mA IC=-12A ;IB=-120mA IC=-6A ; VCE=-3V IC=-5A ; VCE=-3V IC=-6A ; VCE=-3V IC=-12A ; VCE=-3V VCB=-100V; IE=0 TC=150℃ VCE=-50V; IB=0 VEB=-5V; IC=0 IF=-3A IF=-8A -2.5 1000 750 100 MIN -100 BDX88C TYP. MAX UNIT V -2.0 -3.0 -4.0 -2.8 V V V V 18000 -0.5 -5.0 -1.0 -1.0 -1.8 mA mA mA V V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX88C Fig.2 Outline dimensions 3