BDX92

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -60V(Min)- BDX92 -80V(Min)- BDX94 -100V(Min)- BDX96 ·Complement to Type BDX91/93/95 APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BDX92 VCBO Collector-Base Voltage BDX94 BDX96 BDX92 VCEO Collector-Emitter Voltage BDX94 BDX96 VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -60 -80 -100 -60 -80 -100 -5 -10 -15 90 200 -65~200 V A A W ℃ ℃ V V UNIT BDX92/94/96 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX92 V(BR)CEO Collector-Emitter Breakdown Voltage BDX94 BDX96 VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage BDX92 ICBO Collector Cutoff Current BDX94 BDX96 BDX92 ICEO Collector Cutoff Current BDX94 BDX96 IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product IC= -3A; IB= -0.3A B BDX92/94/96 CONDITIONS MIN -45 TYP. MAX UNIT IC= -30mA ;IB=0 B -60 -80 -0.8 -1.0 -1.5 -2.0 -1.4 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 V V V V V V IC= -5A; IB= -1A B IC= -3A; IB= -0.3A B IC= -5A; IB= -1A B IC= -3A; VCE= -2V VCB= -60V; IE= 0 VCB= -30V; IE= 0; TC= 150℃ VCB= -80V; IE= 0 VCB= -40V; IE= 0; TC= 150℃ VCB= -100V; IE= 0 VCB= -50V; IE= 0; TC= 150℃ VCE= -60V;IB= 0 VCE= -80V;IB= 0 VCE= -100V;IB= 0 VEB= -5V; IC= 0 IC= -3A; VCE= -2V IC= -5A; VCE= -2V IC= -1A; VCE= -10V 20 10 4 mA -0.2 mA -0.1 mA MHz Switching times ton toff Turn-on Time IC= -3A; IB1= -IB2= -0.3A Turn-off Time 2.0 μs 1.0 μs isc Website：www.iscsemi.cn 2