BDY39

BDY39

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    BDY39 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
BDY39 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY39 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain: hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max)@ IC = 4A APPLICATIONS ·Designed for use in high power AF output stages and in stabilized power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 100 70 60 7 15 22.5 7 115 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDY39 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA; IB=0 B 60 V VCEV(SUS) Collector-Emitter Sustaining Voltage IC=100mA; VBE= -1.5V IC=200mA; RBE=100Ω 100 V VCER(SUS) Collector-Emitter Sustaining Voltage 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.7 V VBE(on) ICEO Base-Emitter On Voltage IC= 4A; VCE= 4V 1.1 V Collector Cutoff Current VCE= 30V; IB=0 B 0.7 1.0 5.0 1.0 mA ICEV Collector Cutoff Current VCE= 100V; VBE= -1.5V VCE= 60V; VBE= -1.5V, TC=150℃ VEB= 7V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 4A; VCE= 4V 25 100 fT Current Gain-Bandwidth Product IC= 0.3A; VCE= 2V 0.8 MHz isc Website:www.iscsemi.cn 2
BDY39
1. 物料型号: - 型号:BDY39 - 制造商:INCHANGE Semiconductor

2. 器件简介: - BDY39是一款硅NPN功率晶体管,具有出色的安全工作区。 - 直流电流增益(hFE)在4A集电极电流时为25-100。 - 集电极-发射极饱和电压(VCE(sat))在4A集电极电流时最大为0.7V。

3. 引脚分配: - 1. BASE(基极) - 2. EMITTER(发射极) - 3. COLLECTOR(集电极)

4. 参数特性: - 绝对最大额定值(Ta=25℃): - VCBO:100V - VCER:70V - VCEO:60V - VEBO:7V - Ic:15A(连续) - ICM:22.5A(峰值) - IB:7A - Pc:115W(25°C时集电极功耗) - TJ:200°C(结温) - Tstg:-65~200°C(存储温度) - 热特性: - Rth j-c:1.5°C/W(结到外壳的热阻)

5. 功能详解: - 设计用于高功率音频输出阶段和稳定电源供应。 - 电气特性(Tc=25°C): - V(BR)CEO:60V(集电极-发射极击穿电压) - VCEV(SUS):100V(集电极-发射极维持电压) - VCER(SUS):70V(集电极-发射极维持电压) - VCE(sat):0.7V(集电极-发射极饱和电压) - VBE(on):1.1V(基极-发射极导通电压) - ICEO:0.7mA(集电极截止电流) - IEBO:1.0mA(发射极截止电流) - hFE:25-100(直流电流增益) - fT:0.8MHz(电流增益-带宽积)

6. 应用信息: - 适用于高功率音频输出阶段和稳定电源供应。

7. 封装信息: - TO-3封装,具体尺寸参数如下: - A:39.00mm - B:25.30-26.67mm - C:7.80-8.30mm - D:0.90-1.10mm - E:1.40-1.60mm - G:10.92mm - H:5.46mm - K:11.40-13.50mm - L:16.75-17.05mm - N:19.40-19.62mm - O:4.00-4.20mm - U:30.00-30.20mm - V:4.30-4.50mm
BDY39 价格&库存

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