BDY39

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY39 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain: hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max)@ IC = 4A APPLICATIONS ·Designed for use in high power AF output stages and in stabilized power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 100 70 60 7 15 22.5 7 115 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDY39 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA; IB=0 B 60 V VCEV(SUS) Collector-Emitter Sustaining Voltage IC=100mA; VBE= -1.5V IC=200mA; RBE=100Ω 100 V VCER(SUS) Collector-Emitter Sustaining Voltage 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.7 V VBE(on) ICEO Base-Emitter On Voltage IC= 4A; VCE= 4V 1.1 V Collector Cutoff Current VCE= 30V; IB=0 B 0.7 1.0 5.0 1.0 mA ICEV Collector Cutoff Current VCE= 100V; VBE= -1.5V VCE= 60V; VBE= -1.5V, TC=150℃ VEB= 7V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 4A; VCE= 4V 25 100 fT Current Gain-Bandwidth Product IC= 0.3A; VCE= 2V 0.8 MHz isc Website：www.iscsemi.cn 2