BDY46

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY46 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min.) ·DC Current Gain: hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC = 15A ·High Switching Speed APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC≤45℃ Junction Temperature Storage Temperature VALUE 600 600 300 7 15 17 5 95 175 -65~175 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.37 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDY46 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 15A; IB= 5A VCB= 600V; IE= 0 VCB= 600V; IE= 0, TC=150℃ IC= 2A; VCE= 2V 20 2.0 0.2 2.5 V Collector Cutoff Current mA hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 10A; VCE= 2V 5 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V 10 MHz Switching times μs μs μs ton Turn-on Time 0.5 tf Fall Time IC= 5A; IB1= -IB2= 1A 1.0 toff Turn-off Time 3.5 isc Website：www.iscsemi.cn 2