BDY53

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY53 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 100 60 7 12 5 60 200 -65~200 UNIT V V V A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICEX IEBO hFE fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS IC= 100mA; IB= 0 IC= 4A; IB= 0.4A B BDY53 MIN 60 TYP. MAX UNIT V 1.1 2.2 2.0 2.5 15 3.0 20 20 V V V V mA mA IC= 7A; IB= 1.4A B IC= 4A; IB= 0.4A B IC= 7A; IB= 1.4A B VCE= 100V;VBE=-1.5V,TC=150℃ VEB= 7V; IC= 0 IC= 2A; VCE= 1.5V IC= 0.5A; VCE= 4V; f=10MHz MHz Switching Times ton toff Turn-On Time Turn-Off Time IC= 5A; IB= 1A B 0.3 1.8 μs μs IC= 5A; IB1= 1A; IB2= -0.5A isc Website：www.iscsemi.cn 2