BDY55

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY55 DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・LF large signal power amplification. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 60 7 15 7 117 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY55 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 60 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=0.4A IC=10A ;IB=3.3A 1.1 V Collector-emitter saturation voltage 2.5 V VBE Base-emitter on voltage IC=4 A; VCE=4V VCE=100V; VBE=-1.5V TC=150℃ VCE=30V; IB=0 1.8 5.0 30 0.7 V ICEX Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 hFE-2 DC current gain IC=4A ; VCE=4V IC=10A ; VCE=4V 20 70 DC current gain 10 fT Transition frequency IC=1A ; VCE=4V;f=10MHz 10 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDY55 Fig.2 Outline dimensions 3