BDY57

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BDY57 VCBO Collector-base voltage BDY58 BDY57 VCEO Collector-emitter voltage BDY58 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 125 10 25 6 175 200 -65~200 V A A W ℃ ℃ Open emitter 160 80 V CONDITIONS VALUE 120 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BDY57 VCEO(SUS) Collector-emitter sustaining voltage BDY58 BDY57 V(BR)CBO Collector-emitter breakdown voltage BDY58 VCEsat VBEsat ICBO ICER IEBO hFE-1 hFE-2 fT ton Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time IC=10A ;IB=1A IC=10A ;IB=1A VCB=100V; IE=0 VCE=80V; RBE=10Ω;TC=100℃ VEB=10V; IC=0 IC=10A ; VCE=4V IC=20A ; VCE=4V IC=1A ; VCE=15V,f=10MHz IC=15A ;IB=1.5A IC=5mA ; IE=0 IC=0.1A ; IB=0 CONDITIONS BDY57 BDY58 MIN 80 TYP. MAX UNIT V 125 120 V 160 1.4 1.4 0.5 10 0.5 20 15 10 1.0 MHz μs 60 V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDY57 BDY58 Fig.2 Outline dimensions 3