BDY58

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY58 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage APPLICATIONS ·LF signal power amplification. ·High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 125 10 25 6 175 200 -65~200 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) ICBO ICER IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector- Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 100mA ; IB= 0 IC= 5mA ; IE= 0 IE= 5mA ; IC= 0 IC= 10A; IB= 1A VCB= 120V; IE= 0 VCE= 80V; RBE= 10Ω VCE= 80V; RBE= 10Ω; TC=100℃ VEB= 10V; IC= 0 IC= 10A ; VCE= 4V IC= 20A ; VCE= 4V IC= 1A ; VCE= 15V; f= 10MHz 10 20 15 MIN 125 160 10 TYP. BDY58 MAX UNIT V V V 1.4 0.5 0.5 10 0.5 80 V mA mA mA MHz Switching Times Turn-On Time Turn-Off Time IC= 15A , IB = 1.5A, B ton toff 1.0 2.0 μs μs IC= 15A , IB1 = -IB2 = 1.5A, isc Website：www.iscsemi.cn 2