BDY72

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY72 DESCRIPTION ·Contunuous Collector Current-IC= 3A ·Collector Power Dissipation: PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEX VCER VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 150 120 150 130 7 3 2 25 200 -65~200 UNIT V V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDY72 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 IC= 100mA; RBE= 100Ω 120 V VCER(SUS) Collector-Emitter Sustaining Voltage 130 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 6.0 V VBE(on) ICEO Base-Emitter On Voltage IC= 0.5A; VCE= 4V 1.7 V Collector Cutoff Current VCE= 140V; IB= 0 VCE= 130V; VBE(off)= 1.5V VCE= 130V; VBE(off)= 1.5V, TC=150℃ VEB= 7V; IC= 0 10 1.0 5.0 1.0 mA ICEX Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 0.5A; VCE= 4V 60 180 fT Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V 0.8 MHz isc Website：www.iscsemi.cn 2