BDY73

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY73 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=50-150@IC = 4A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 100 70 60 7 15 7 117 200 -65~200 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDY73 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 IC= 200mA; RBE= 100Ω 60 V VCER(SUS) Collector-Emitter Sustaining Voltage 70 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V 90 V VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V Base-Emitter On Voltage IC= 4A; VCE= 4V 1.8 V Collector Cutoff Current VCE= 30V; IB=0 B 0.7 1.0 5.0 5.0 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ VEB= 7.0V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product IC= 4A; VCE= 4V 50 150 Is/b fT VCE= 60V, t= 1.0s, Nonrepetitive IC= 1A; VCE= 4V 1.95 A 0.8 MHz isc Website：www.iscsemi.cn 2