BDY79

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY79 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation: PC= 25W @TC= 25℃ APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEX VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 150 150 120 7 4 2 25 200 -65~200 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 7.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat)-1 VCE(sat)-2 VBE(on) ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product CONDITIONS IC= 100mA; IB= 0 IC= 1mA; IE= 0 IC= 0.5A; IB= 50mA IC= 3A; IB= 1A B BDY79 MIN 120 150 MAX UNIT V V 1.0 3.0 2.0 1.0 5.0 1.0 25 5 8 100 V V V mA mA IC= 0.5A; VCE= 4V VCE= 150V; VBE= -1.5V VCE= 150V; VBE= -1.5V, TC=150℃ VEB= 7V; IC= 0 IC= 0.5A; VCE= 4V IC= 3A; VCE= 4V IC= 0.2A; VCE= 10V MHz isc Website：www.iscsemi.cn 2