BDY91

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY91 DESCRIPTION ·High DC Current Gain: hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC≤25℃ Junction Temperature Storage Temperature Range VALUE 100 100 80 6 10 15 2 60 175 -65~175 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BDY91 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 80 V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.5 V Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V Collector Cutoff Current VCB=100V; IE=0 VCE=100V;VBE=-1.5V VCE=100V;VBE=-1.5V;TC=150℃ VEB=6V; IC=0 1.0 1.0 3.0 1.0 mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff current mA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 35 hFE-2 hFE-3 DC Current Gain IC= 5A ; VCE= 5V IC= 10A ; VCE= 5V 30 120 DC Current Gain 20 fT Current-Gain—Bandwidth Product IC= 0.5 A;VCE= 5V;ftest = 5MHz 70 MHz Switching Times μs μs μs ton tstg tf Turn-On Time IC= 5A; IB1= -IB2= 0.5A, VCC=30V 0.35 Storage Time 1.3 Fall Time 0.2 isc Website：www.iscsemi.cn