BFQ540

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ540 DESCRIPTION ·High Gain ·High Output Voltage ·Low Noise APPLICATIONS ·Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 120 mA PC Collector Power Dissipation @TC=25℃ 1.2 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BFQ540 TYP. MAX UNIT V(BR)CES Collector-Emitter Breakdown Voltage IC= 40μA ; RBE= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.2 μA hFE DC Current Gain IC= 40mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1GHz 9 GHz Cre ︱S21e︱2 Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.9 pF Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 12 13 dB NF Noise Figure IC= 40mA ; VCE= 8V; f= 900MHz 1.9 2.4 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ540 isc Website：www.iscsemi.cn