BFQ591

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 200 mA PC Collector Power Dissipation @TC=25℃ 2.25 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CES V(BR)CBO V(BR)EBO ICBO hFE fT PG PG Cre ︱S21e︱2 VO PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Power Gain Power Gain Feedback Capacitance Insertion Power Gain Output Voltage CONDITIONS IC= 0.1mA ; IB= 0 IC= 0.1m A ; IE= 0 IE= 0.1m A ; IC= 0 VCB= 10V; IE= 0 IC= 70mA ; VCE= 8V IC= 70mA ; VCE= 12V; f= 1GHz IC= 70mA;VCE= 12V; f= 900MHz IC= 70mA;VCE= 12V; f= 2GHz IE= 0 ; VCB= 12V; f= 1MHz IC= 70mA ; VCE= 12V; f= 1GHz note 60 7 11 5.5 0.8 10 MIN 15 20 3 BFQ591 TYP. MAX UNIT V V V 0.1 250 μA GHz dB dB pF dB mV 700 Note: dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured @ f(p+q+r) = 793.25 MHz. isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 isc Website：www.iscsemi.cn 4