BFR520

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BFR520 MAX UNIT ICBO Collector Cutoff Current VCB= 6V; IE= 0 0.05 μA hFE DC Current Gain IC= 20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1GHz 9 GHz COB Output Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.5 pF PG Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 15 dB PG Power Gain IC= 20mA ; VCE= 6V; f= 2GHz 9 dB ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 13 14 dB NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB NF Noise Figure IC= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn 4 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn 6 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn