BFR93AW

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in RF amplifiers ,mixers and oscillators with signal frequencies up to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BFR93AW TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 5V; IE= 0 0.05 μA hFE DC Current Gain IC= 30mA ; VCE= 5V 40 fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 5V; f= 500MHz 4 5 GHz COB Output Capacitance IE= 0 ; VCB= 5V; f= 1MHz 0.7 pF Cre Feedback Frequency IE= 0 ; VCB= 5V; f= 1MHz 0.6 pF NF Noise Figure IC= 5mA ; VCE= 8V; f= 1GHz 1.5 dB NF Noise Figure IC= 5mA ; VCE= 8V; f= 2GHz 2.1 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Website：www.iscsemi.cn 4 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Website：www.iscsemi.cn 6 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Website：www.iscsemi.cn