BFS67

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFS67 DESCRIPTION ·Low Noise Figure NF = 4.5 dB TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz ·High Current-Gain—Bandwidth Product fT= 1 GHz TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz APPLICATIONS ·For a wide range of RF applications such as: mixers and oscillators in TV tuners and RF communications equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 25 mA ICM Collector Current-Peak 50 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BFS67 MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.01 μA hFE-1 DC Current Gain IC= 2mA ; VCE= 1V 25 hFE-2 DC Current Gain IC= 25mA ; VCE= 1V 25 fT Current-Gain—Bandwidth Product IC= 2mA ; VCE= 5V; f= 500MHz 1 GHz fT Current-Gain—Bandwidth Product IC= 25mA ; VCE= 5V; f= 500MHz 1.6 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.8 1.5 pF Cre Feedback Capacitance IC= 1mA ; VCB= 5V; f= 1MHz IC= 2mA ; VCE= 5V;RS= 50Ω f= 500MHz 0.65 pF NF Noise Figure 4.5 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFS67 isc Website：www.iscsemi.cn