BU102

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU102 DESCRIPTION ・With TO-3 package ・VCEO(sus)=150V (min) APPLICATIONS ・Designed for horizontal deflection output stage of CTV receivers PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 150 6 7 100 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU102 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 150 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V V(BR)CBO Collector-base breakdown votage IC=1mA; IE=0 400 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.0 A 2.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.0 A 2.5 V ICBO Collector cut-off current VCB=400V; IE=0 0.1 mA ICEO Collector cut-off current VCE=100V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 30 120 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU102 Fig.2 Outline dimensions 3