0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
电子发烧友
开通电子发烧友VIP会员 尊享10大特权
海量资料免费下载
精品直播免费看
优质内容免费畅学
课程9折专享价
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BU104

BU104

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    BU104 - isc Silicon NPN Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
BU104 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU104 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max.)@ IC= 7A APPLICATIONS ·Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEX VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage VBE= -5V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Repetitive Base Current-Continuous Collector Power Dissipation @ TC= 25℃ Junction Temperature Storage Temperature Range VALUE 400 150 400 10 7 15 3 85 200 -65~200 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.0 UNIT ℃/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU104 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1A B 2.5 V ICBO Collector Cutoff Current VCB= 250V; IE= 0 0.5 mA ICEX Collector Cutoff Current VCE= 400V; VBE= -5V 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 mA hFE DC Current Gain IC= 5A; VCE= 1.75V 10 50 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 10 MHz isc Website:www.iscsemi.cn 2
BU104 价格&库存

很抱歉,暂时无法提供与“BU104”相匹配的价格&库存,您可以联系我们找货

免费人工找货