INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU104
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max.)@ IC= 7A APPLICATIONS ·Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VCEX VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage VBE= -5V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Repetitive Base Current-Continuous Collector Power Dissipation @ TC= 25℃ Junction Temperature Storage Temperature Range
VALUE 400 150 400 10 7 15 3 85 200 -65~200
UNIT V V V V A A A W ℃ ℃
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.0 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BU104
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
150
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7A; IB= 1A
B
2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 7A; IB= 1A
B
2.5
V
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
0.5
mA
ICEX
Collector Cutoff Current
VCE= 400V; VBE= -5V
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
10
mA
hFE
DC Current Gain
IC= 5A; VCE= 1.75V
10
50
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
10
MHz
isc Website:www.iscsemi.cn
2
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