BU105

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU105 DESCRIPTION ·High Voltage-VCER= 1500V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 2.5A APPLICATIONS ·Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC= 90℃ Junction Temperature Storage Temperature VALUE 1500 1500 750 5 2.5 10 115 -65~115 UNIT V V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU105 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 1.5A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 65 pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 7.5 MHz tf Fall Time IC= 2A; IB1= 1.5A; LB= 12μH 0.5 μs isc Website：www.iscsemi.cn 2