BU109

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150 V(Min) APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEV VCEO VEBO IC ICM ICM IB B BU109 PARAMETER Collector-Base Voltage Collector-Emitter Voltage- VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak(Repetitive) Collector Current-Peak(t= 10ms) Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 330 330 150 6 7 10 15 4 60 150 -65~150 UNIT V V V V A A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 2.08 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU109 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 5.0 0.1 1.0 1.0 V ICES Collector Cutoff Current VCE= 330V; VBE= 0 VCE= 200V; VBE= 0 VCE= 200V; VBE= 0,TC=150℃ VEB= 6V; IC= 0 mA IEBO Emitter Cutoff Current mA fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V 10 MHz toff Turn-Off Time IC= 5A; IB= 0.5A B 0.75 μs isc Website：www.iscsemi.cn 2