BU111

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU111 DESCRIPTION ·Collector-Emitter Sustaining Voltag: VCEO(SUS)= 300V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·Designed for use in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Repetitive Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 500 300 6 6 8 3 50 200 -65~200 UNIT V V V A A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU111 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V ICBO Collector Cutoff Current VCB= 400V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 0.1 mA fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 10 MHz isc Website：www.iscsemi.cn 2