BU112

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BU112 DESCRIPTION ·Collector-Emitter Voltage:VCEX(SUS) = 550V(Min.) ·Collector Current- IC= 10A APPLICATIONS ·Designed for deflection circuits applications in color TV receivers fitted with 90℃ kinescope. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 550 V VCEX Collector-Emitter Voltage VBE= -5V 550 V VEBO Emitter-Base Voltage 10 V IC IB B Collector Current-Continuous 10 A Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 4 A PC 60 W ℃ ℃ Tj 200 Tstg Storage Temperature Range -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.9 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU112 MAX UNIT V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 3.0 V ICEX Collector Cutoff Current VCE= 550V; VBE= -5V 10 mA hFE DC Current Gain IC= 6A; VCE= 2V 7 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V 6 MHz COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 250 pF tf Fall Time IC=6A; IB1= 1A; VBE= -3V 1.0 μs isc Website：www.iscsemi.cn