BU126

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU126 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For voltage regulator ,inverter,switching mode power supply applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base VALUE 750 300 3.0 6.0 2.0 40 125 -65~125 UNIT V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.5 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU126 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0; 300 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=2.5 A;IB=0.25A 10 V VCEsat-2 Collector-emitter saturation voltage IC=4 A;IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=4A;IB=1A VCE=750V;VBE=0 Ta=125℃ VEB=5V; IC=0 1.5 0.5 2 0.1 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=1A ; VCE=5V 15 COB Output capacitance IE=0; VCB=10V;f=0.5MHz 75 pF fT Transition frequency IC=0.2 A ; VCE=10V 10 MHz μs tf Fall time IC=2.5A ;IB=0.25A 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU126 Fig.2 Outline dimensions 3