BU133

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU133 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Intended for operating in color TV receiver’s chopper supplies PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=50℃ Open emitter Open base Open collector CONDITIONS MAX 750 250 7 3 30 200 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 2.33 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IE=10mA ; IC=0 IC=2A; IB=0.5A IC=2A; IB=0.5A VCB=750V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 MIN 250 7 TYP. BU133 MAX UNIT V V 1.5 1.4 0.1 0.1 80 V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU133 Fig.2 Outline dimensions 3