BU1506DX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1506DX DESCRIPTION ・With TO-220F package ・High voltage ・High speed switching ・Built-in damper diode. APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 5 8 3 8 32 150 -40~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1506DX CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance CONDITIONS IE=600mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=3A; IB=0.79A IC=3A; IB=0.79A VCE=rated;VBE=0 Tj=125℃ VEB=7.5V; IC=0 IC=0.3A ; VCE=5V IC=3.0A ; VCE=5V IF=3.0A IE=0,f=1MHz;VCB=10V 3.8 90 12 5.5 1.6 47 7.5 2.0 V pF MIN 7.5 700 5.0 1.1 1.0 2.0 180 TYP. 13.5 MAX UNIT V V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU1506DX Fig.2 Outline dimensions 3