BU1507DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU1507DX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V(Min.) ·High Speed Switching ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCESM VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 700 7.5 8 15 4 6 35 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.7 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 VECF COB PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain C-E Diode Forward Voltage Collector Output Capacitance CONDITIONS IC= 0.1A; IB= 0; L= 25mH IE= 600mA; IC= 0 IC= 4A; IB= 0.8A B BU1507DX MIN 700 7.5 TYP. MAX UNIT V V 5.0 1.1 1.0 2.0 160 14 5 9 2.0 68 V V mA mA IC= 4A; IB= 0.8A B VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125℃ VEB= 7.5V; IC= 0 IC= 1A; VCE= 5V IC= 4A; VCE= 5V IF= 4A IE= 0; VCB= 10V; f= 1MHz V pF Switching Times Resistive Load ts tf Storage Time IC= 4A; IB(end)= 0.7A; LB= 6μH; -VBB= 4V Fall Time 0.5 6.0 μs μs isc Website：www.iscsemi.cn