BU1508DX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508DX DESCRIPTION ・With TO-220F package ・High voltage ・High speed switching ・Built-in damper diode. APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current (peak) Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 8 15 4 6 35 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508DX CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance CONDITIONS IE=600mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4.5A; IB=1.1A IC=4.5A; IB=1.7A VCE=rated;VBE=0 Tj=125℃ VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IF=4.5A IE=0;f=1MHz;VCB=10V 4 140 13 5.5 1.6 80 7.0 2.0 V pF MIN 7.5 700 1.0 1.3 1.0 2.0 390 TYP. 13.5 MAX UNIT V V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU1508DX Fig.2 Outline dimensions 3