BU1706A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU1706A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCESM VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1750 750 12 5 8 3 5 100 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0; L= 25mH IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125℃ VEB= 12V; IC= 0 IC= 5mA; VCE= 10V IC= 400mA; VCE= 3V IC= 1.5A; VCE= 1V 8 12 5 MIN 750 BU1706A TYP. MAX UNIT V 1.0 1.3 1.0 2.0 1.0 V V mA mA 35 Switching Times Resistive Load ton ts tf Turn-On Time Storage Time Fall Time IC= 1.5A; IB1= -IB2= 0.3A 1.5 6.5 1.0 μs μs μs isc Website：www.iscsemi.cn