BU205

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU205 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE 1500 700 2.5 3 0.1 1.5 10 115 -65~115 UNIT V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.5 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU205 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V 2 COB Output capacitance IE=0; VCB=10V;f=1MHz 65 pF fT Transition frequency IC=0.1A ; VCE=15V IC=2A ;IB=1A LB=10μH 7.5 MHz tf Fall time 0.75 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU205 Fig.2 Outline dimensions 3