BU207

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU207 DESCRIPTION ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 1300 600 5 5.0 7.5 2.5 55 115 -65~115 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.64 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU207 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE= 1300V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 10 mA hFE DC Current Gain IC= 4.5A; VCE= 5V 2.25 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 125 pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 1MHz IC= 4.5A; IB= 1.8A; LB= 10μH 4 MHz tf Fall Time 1.0 μs isc Website：www.iscsemi.cn 2