BU208

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU208 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 5 7.5 0.1 2.5 150 115 -65~115 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1. 6 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU208 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4.5A ; VCE=5V 2.25 COB Output capacitance IE=0; VCB=10V;f=1MHz 150 pF fT Transition frequency IC=0.1A ; VCE=15V 1 MHz ts Storage time IC=4.5A ;IB=1.8A LB=10μH 10 μs tf Fall time 0.7 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU208 Fig.2 Outline dimensions 3