BU208A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU208A DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 5 7.5 0.1 2.5 150 115 -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1. 0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 COB fT ts tf PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency Storage time IC=4.5A ;IB=1.8A LB=10μH Fall time CONDITIONS IC=0.1A; IB=0;L=25mH IE=10mA; IC=0 IC=4.5 A;IB=2 A IC=4.5 A;IB=2 A VCE=1500V;VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=15V 8 2.25 125 7 MIN 700 5 BU208A TYP. MAX UNIT V V 1.0 1.5 1.0 0.1 V V mA mA pF MHz 10 0.7 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU208A Fig.2 Outline dimensions 3