BU208D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU208D DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Damper Diode APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 1500 700 10 8.0 15 150 175 -65~175 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU208D TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC= 125℃ VEB= 5.0V; IC= 0 1.3 1.0 2.0 300 V ICES Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 1A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 5MHz 7 MHz VECF C-E Diode Forward Voltage IF= 4A 2 V Switching Times( Inductive load) ts Storage Time IC= 4.5A; IB= 1.8A; LB= 3μH; VCC= 140V, LC= 0.9mH Fall Time 7 μs tf 0.55 μs isc Website：www.iscsemi.cn 2